amplifier transistors npn silicon maximum ratings rating symbol bc337 bc338 unit collectoremitter voltage v ceo 45 25 vdc collectorbase voltage v cbo 50 30 vdc emitterbase voltage v ebo 5.0 vdc collector current continuous i c 800 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watt mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 10 ma, i b = 0) bc337 bc338 v (br)ceo 45 25 vdc collectoremitter breakdown voltage (i c = 100 m a, i e = 0) bc337 bc338 v (br)ces 50 30 vdc emitterbase breakdown voltage (i e = 10 a, i c = 0) v (br)ebo 5.0 vdc collector cutoff current (v cb = 30 v, i e = 0) bc337 (v cb = 20 v, i e = 0) bc338 i cbo 100 100 nadc collector cutoff current (v ce = 45 v, v be = 0) bc337 (v ce = 25 v, v be = 0) bc338 i ces 100 100 nadc emitter cutoff current (v eb = 4.0 v, i c = 0) i ebo 100 nadc on semiconductor ? semiconductor components industries, llc, 2001 october, 2001 rev. 2 1 publication order number: bc337/d bc337, bc337-16, bc337-25, bc337-40, bc338-25 case 2904, style 17 to92 (to226aa) 1 2 3 collector 1 2 base 3 emitter
bc337, bc33716, bc33725, bc33740, bc33825 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics dc current gain (i c = 100 ma, v ce = 1.0 v) bc337 bc33716 bc33725/bc33825 bc33740 (i c = 300 ma, v ce = 1.0 v) h fe 100 100 160 250 60 630 250 400 630 baseemitter on voltage (i c = 300 ma, v ce = 1.0 v) v be(on) 1.2 vdc collectoremitter saturation voltage (i c = 500 ma, i b = 50 ma) v ce(sat) 0.7 vdc smallsignal characteristics output capacitance (v cb = 10 v, i e = 0, f = 1.0 mhz) c ob 15 pf currentgain bandwidth product (i c = 10 ma, v ce = 5.0 v, f = 100 mhz) f t 210 mhz figure 1. thermal response t, time (seconds) 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 r(t), normalized effective transient thermal resistance d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse q jc (t) = (t) q jc q jc = 100 c/w max q ja (t) = r(t) q ja q ja = 375 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) q jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 single pulse
bc337, bc33716, bc33725, bc33740, bc33825 http://onsemi.com 3 current limit thermal limit second breakdown limit 1.0 ms 1.0 s t j = 135 c t a = 25 c t c = 25 c dc dc (applies below rated v ceo ) 1000 10 100 1.0 3.0 10 30 v ce , collector-emitter voltage figure 2. active region safe operating area i c , collector current (amp) figure 3. dc current gain i c , collector current (ma) h fe , dc current gain 100 1000 10 1000 0.1 10 100 100 1.0 t j = 135 c 100 m s v ce = 1 v t j = 25 c i b , base current (ma) figure 4. saturation region i c , collector current (ma) figure 5. aono voltages 100 10 1 v r , reverse voltage (volts) figure 6. temperature coefficients +1 i c , collector current (ma) figure 7. capacitances 0.1 1 1 10 100 1000 -2 -1 0 v ce , collector-emitter voltage (volts ) v, voltage (volts) v , temperature coefficients (mv/ c) q c, capacitance (pf) 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 100 1 1.0 0.8 0.6 0.4 0.2 0 1 10 1000 100 10 100 t j = 25 c i c = 10 ma t a = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 1 v v ce(sat) @ i c /i b = 10 q vc for v ce(sat) q vb for v be c ob c ib 100 ma 300 ma 500 ma
bc337, bc33716, bc33725, bc33740, bc33825 http://onsemi.com 4 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 case 02904 (to226aa) issue ad style 17: pin 1. collector 2. base 3. emitter on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bc337/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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